PHOTOSENSITIVE FIELD-EFFECT TRANSISTOR BASED ON REDUCED GRAPHENE OXIDE FILM

A photosensitive graphene field-effect transistor was created by depositing a reduced graphene oxide (rGO) film on the surface of the SiO2 layer on a silicon substrate, which serves as both a photosensitive medium and the field-effect transistor gate. The electrical and photoelectric properties of the field-effect transistor based on the rGO film were studied in DC and AC modes. Linear sections of the drain current on the gate voltage dependence and significant dependence of the electronic component of the rGO film conductivity on the irradiation with white light were revealed based on the analysis of the switching characteristics of the obtained field-effect transistor. A photoinduced decrease in the internal resistance and an increase in the capacitance of the conducting channel of the graphene field-effect transistor in the range of 102–105 Hz were revealed. It has been established that the photoresponse time of the obtained field-effect transistor to light pulses of IR, visible, and UV radiation is about 1.5 ms. The obtained results can be used to simplify the technology of manufacturing photodetectors based on graphene.