B. Atwood, T. Ishii, Takao Watanabe, T. Mine, N. Kameshiro, T. Sano, K. Yano
{"title":"一种具有低待机功耗技术的腔通道SESO嵌入式存储器","authors":"B. Atwood, T. Ishii, Takao Watanabe, T. Mine, N. Kameshiro, T. Sano, K. Yano","doi":"10.1109/ESSCIR.2004.1356690","DOIUrl":null,"url":null,"abstract":"A 22F/sup 2/ 3-transistor dynamic memory cell, based on a newly fabricated cavity channel SESO (single-electron shutoff) transistor is proposed for low-power mobile SOCs. The ultra-low leakage SESO device is formed above the bulk devices to yield the small cell size. With low-power techniques, this memory can achieve nearly an order of magnitude lower standby power than conventional memory. A 1 Mbyte SESO embedded memory core is estimated to have a standby power consumption of 24.2 /spl mu/A in a 90 nm process.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A cavity channel SESO embedded memory with low standby-power techniques\",\"authors\":\"B. Atwood, T. Ishii, Takao Watanabe, T. Mine, N. Kameshiro, T. Sano, K. Yano\",\"doi\":\"10.1109/ESSCIR.2004.1356690\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 22F/sup 2/ 3-transistor dynamic memory cell, based on a newly fabricated cavity channel SESO (single-electron shutoff) transistor is proposed for low-power mobile SOCs. The ultra-low leakage SESO device is formed above the bulk devices to yield the small cell size. With low-power techniques, this memory can achieve nearly an order of magnitude lower standby power than conventional memory. A 1 Mbyte SESO embedded memory core is estimated to have a standby power consumption of 24.2 /spl mu/A in a 90 nm process.\",\"PeriodicalId\":294077,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2004.1356690\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356690","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A cavity channel SESO embedded memory with low standby-power techniques
A 22F/sup 2/ 3-transistor dynamic memory cell, based on a newly fabricated cavity channel SESO (single-electron shutoff) transistor is proposed for low-power mobile SOCs. The ultra-low leakage SESO device is formed above the bulk devices to yield the small cell size. With low-power techniques, this memory can achieve nearly an order of magnitude lower standby power than conventional memory. A 1 Mbyte SESO embedded memory core is estimated to have a standby power consumption of 24.2 /spl mu/A in a 90 nm process.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
