垂直隧道二极管在高电阻硅

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367766

Yan Yan, Jialin Zhao, Qingmin Liu, Wei Zhao, A. Seabaugh

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引用次数: 3

摘要

我们首次展示了利用自旋扩散剂在高电阻率(100)Si衬底(1000-5000 /spl ω / cm, 100 mm)上通过快速热扩散形成的垂直隧道二极管，从而可以提取射频器件模型。简单的流程流与任何商业前端中的技术兼容。从直流、微波频率s参数和射频阻抗测量中提取器件模型。隧道二极管的特性很好地描述了Schulman-Broekaert分析模型，该模型是为谐振隧道二极管开发的，因此很容易适用于SPICE和ADS建模环境。

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Vertical tunnel diodes on high resistivity silicon

We demonstrate for the first time vertical tunnel diodes formed by rapid thermal diffusion using spin-on diffusants on high resistivity (100) Si substrates, 1000-5000 /spl Omega/ cm, 100 mm, allowing the extraction of an RF device model. The simple process flow is compatible with techniques found in any commercial front end. The device model is extracted from DC, microwave frequency S-parameter, and RF impedance measurements. The tunnel diode characteristics are well described by the Schulman-Broekaert analytic model, developed for the resonant tunneling diode, and therefore fit readily into SPICE and ADS modeling environments.

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来源期刊

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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