{"title":"一种低压过程角不敏感亚阈值CMOS电压参考电路","authors":"Hongchin Lin, Dern-Koan Chang","doi":"10.1109/ICICDT.2006.220833","DOIUrl":null,"url":null,"abstract":"A reference voltage circuit is presented for generating a constant reference voltage of 278mV using subthreshold characteristics of 0.18mum CMOS technology at supply voltages from 0.8V to 2.6V with total current of 3.6muA. The threshold voltage variation due to process corner variation is minimized by a threshold voltage tracking technique between the normal and high threshold NMOS transistors. In the mean time, channel-length modulation effect is also compensated. The proposed circuit on chip area of 0.04mm2 achieves the total reference voltage variation of 2.5mV for various process corners and temperature variation from -20degC to 120degC","PeriodicalId":447050,"journal":{"name":"2006 IEEE International Conference on IC Design and Technology","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"A Low-Voltage Process Corner Insensitive Subthreshold CMOS Voltage Reference Circuit\",\"authors\":\"Hongchin Lin, Dern-Koan Chang\",\"doi\":\"10.1109/ICICDT.2006.220833\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A reference voltage circuit is presented for generating a constant reference voltage of 278mV using subthreshold characteristics of 0.18mum CMOS technology at supply voltages from 0.8V to 2.6V with total current of 3.6muA. The threshold voltage variation due to process corner variation is minimized by a threshold voltage tracking technique between the normal and high threshold NMOS transistors. In the mean time, channel-length modulation effect is also compensated. The proposed circuit on chip area of 0.04mm2 achieves the total reference voltage variation of 2.5mV for various process corners and temperature variation from -20degC to 120degC\",\"PeriodicalId\":447050,\"journal\":{\"name\":\"2006 IEEE International Conference on IC Design and Technology\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on IC Design and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2006.220833\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on IC Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2006.220833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low-Voltage Process Corner Insensitive Subthreshold CMOS Voltage Reference Circuit
A reference voltage circuit is presented for generating a constant reference voltage of 278mV using subthreshold characteristics of 0.18mum CMOS technology at supply voltages from 0.8V to 2.6V with total current of 3.6muA. The threshold voltage variation due to process corner variation is minimized by a threshold voltage tracking technique between the normal and high threshold NMOS transistors. In the mean time, channel-length modulation effect is also compensated. The proposed circuit on chip area of 0.04mm2 achieves the total reference voltage variation of 2.5mV for various process corners and temperature variation from -20degC to 120degC
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