{"title":"基于稀释磁性半导体的MIS结构的量子电容","authors":"G. Kliros","doi":"10.1109/ICM.2009.5418604","DOIUrl":null,"url":null,"abstract":"Quantum capacitance has an important role in nanoscale device modelling. In the present paper, we investigate the quantum magneto-capacitance of metal-insulator-semiconductor (MIS) structures based on diluted magnetic semiconductors (DMS) in the presence of Rashba spin-orbit interaction (SOI). Typical beating patterns with well defined node-positions in the oscillating quantum capacitance are observed. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the giant Zeeman splitting (including s-d exchange interaction) and the Rashba SOI, is discussed.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Quantum capacitance of MIS structures based on diluted magnetic semiconductors\",\"authors\":\"G. Kliros\",\"doi\":\"10.1109/ICM.2009.5418604\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quantum capacitance has an important role in nanoscale device modelling. In the present paper, we investigate the quantum magneto-capacitance of metal-insulator-semiconductor (MIS) structures based on diluted magnetic semiconductors (DMS) in the presence of Rashba spin-orbit interaction (SOI). Typical beating patterns with well defined node-positions in the oscillating quantum capacitance are observed. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the giant Zeeman splitting (including s-d exchange interaction) and the Rashba SOI, is discussed.\",\"PeriodicalId\":391668,\"journal\":{\"name\":\"2009 International Conference on Microelectronics - ICM\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Microelectronics - ICM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2009.5418604\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Microelectronics - ICM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2009.5418604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum capacitance of MIS structures based on diluted magnetic semiconductors
Quantum capacitance has an important role in nanoscale device modelling. In the present paper, we investigate the quantum magneto-capacitance of metal-insulator-semiconductor (MIS) structures based on diluted magnetic semiconductors (DMS) in the presence of Rashba spin-orbit interaction (SOI). Typical beating patterns with well defined node-positions in the oscillating quantum capacitance are observed. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the giant Zeeman splitting (including s-d exchange interaction) and the Rashba SOI, is discussed.
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