{"title":"三种终端雪崩装置的非线性分析","authors":"M. Lefebvre, G. Salmer, Y. Crosnier, E. Constant","doi":"10.1109/EUMA.1976.332235","DOIUrl":null,"url":null,"abstract":"The Influence of a thermionic type injected current on the performances of GaAs IMPATT diodes under large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameters used to vary the operating conditions are the r. f. level, injection phase, d.c. current multiplication factor and base collector doping profile. Interesting results can be expected in X band with a transistor-like device in which the transistor effect, avalanche effect and transit time effect are use together.","PeriodicalId":377507,"journal":{"name":"1976 6th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Non Linear Analysis of Three Terminal Avalanche Devices\",\"authors\":\"M. Lefebvre, G. Salmer, Y. Crosnier, E. Constant\",\"doi\":\"10.1109/EUMA.1976.332235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Influence of a thermionic type injected current on the performances of GaAs IMPATT diodes under large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameters used to vary the operating conditions are the r. f. level, injection phase, d.c. current multiplication factor and base collector doping profile. Interesting results can be expected in X band with a transistor-like device in which the transistor effect, avalanche effect and transit time effect are use together.\",\"PeriodicalId\":377507,\"journal\":{\"name\":\"1976 6th European Microwave Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1976 6th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1976.332235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 6th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1976.332235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non Linear Analysis of Three Terminal Avalanche Devices
The Influence of a thermionic type injected current on the performances of GaAs IMPATT diodes under large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameters used to vary the operating conditions are the r. f. level, injection phase, d.c. current multiplication factor and base collector doping profile. Interesting results can be expected in X band with a transistor-like device in which the transistor effect, avalanche effect and transit time effect are use together.
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