基于22纳米CMOS技术的快速瞬态响应无电容FVF-LDO

Ruolin Zhou, Heng Liu, Wending Qi, Xian Tang, Songping Mai
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引用次数: 0

摘要

提出了一种基于翻转电压从动器(FVF)结构的无电容低差稳压器(LDO),以实现快速瞬态响应和小电压尖峰,并具有良好的电源纹波抑制(PSRR)性能。该无电容LDO采用22纳米CMOS技术,专为物联网(IoT)应用而设计。该LDO采用自适应偏置方法,通过跟踪负载变化来减少静态,通过跟踪输出电压的变化来改善负载的瞬态响应。实验结果表明,当负载电流在100 uA ~ 10 mA之间切换,边缘时间为300 ns时,自适应偏置电路的最大过调值约为25.06 mV,最大欠调值约为38.73 mV。同时,在静态电流为11 uA时,其PSRR在100 kHz时可达到-60.7 dB,在1 MHz时可达到-41.2 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Fast-Transient Response Capacitor-Less FVF-LDO in 22-nm CMOS Technology
This paper presents a capacitor-less low-dropout regulator(LDO) based on flipped voltage follower(FVF) structure to achieve fast-transient response and small voltage spikes with a high power-supply ripple rejection (PSRR) performance. This capacitor-less LDO, implemented in 22 nm CMOS technology, is designed for the Internet-of-Things(IoT) application. With a method of adaptive biasing, this LDO can reduce quiescent by tracking load variations and improve the load transient response by tracing the variation of output voltage. Experimental results show that the maximal overshoot and undershoot with adaptive biasing circuit are about 25.06 mV and 38.73 mV, respectively, at the load current toggling between 100 uA and 10 mA with edge time of 300 ns. At the same time, its PSRR can achieve about -60.7 dB at 100 kHz and -41.2 dB at 1 MHz with quiescent current of 11 uA.
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