ByongJin Kim, A. Bolotnikov, Helen Jeong, Chandong Kim, Hrishkesh Das, Ganesh Ponram
{"title":"先进的SiC电源技术和封装","authors":"ByongJin Kim, A. Bolotnikov, Helen Jeong, Chandong Kim, Hrishkesh Das, Ganesh Ponram","doi":"10.1109/EDTM55494.2023.10103126","DOIUrl":null,"url":null,"abstract":"The new era in power application is being driven by the wide band gap semiconductor material such as SiC and GaN. The major benefits from them are better power efficiency by low Rdson and high breakdown voltage and high temperature stability. Cascode device is one of them to require the more power efficiency and density. This device based on Si has a limit in application by switching loss and Rdson loss. In this paper, various challenges from SiC material, fabrication to assembly are discussed. Also, the co-package integrating SiC and Si MOSFET in a package for better power efficiency has been studied if it is applicable to cascode device.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced SiC Power Technology and Package\",\"authors\":\"ByongJin Kim, A. Bolotnikov, Helen Jeong, Chandong Kim, Hrishkesh Das, Ganesh Ponram\",\"doi\":\"10.1109/EDTM55494.2023.10103126\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The new era in power application is being driven by the wide band gap semiconductor material such as SiC and GaN. The major benefits from them are better power efficiency by low Rdson and high breakdown voltage and high temperature stability. Cascode device is one of them to require the more power efficiency and density. This device based on Si has a limit in application by switching loss and Rdson loss. In this paper, various challenges from SiC material, fabrication to assembly are discussed. Also, the co-package integrating SiC and Si MOSFET in a package for better power efficiency has been studied if it is applicable to cascode device.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103126\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The new era in power application is being driven by the wide band gap semiconductor material such as SiC and GaN. The major benefits from them are better power efficiency by low Rdson and high breakdown voltage and high temperature stability. Cascode device is one of them to require the more power efficiency and density. This device based on Si has a limit in application by switching loss and Rdson loss. In this paper, various challenges from SiC material, fabrication to assembly are discussed. Also, the co-package integrating SiC and Si MOSFET in a package for better power efficiency has been studied if it is applicable to cascode device.
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