{"title":"Ta2O5阻性模拟神经形态器件阻性开关行为的电极材料依赖性","authors":"H. Shima, Makoto Takahashi, Y. Naitoh, H. Akinaga","doi":"10.1109/EDTM.2018.8421520","DOIUrl":null,"url":null,"abstract":"High-speed analog resistance switching characteristics were demonstrated in TiN/TaO x/ Ta<inf>2</inf>O<inf>5</inf>/TiN resistive analog neuromorphic device (RAND). An introduction of the TiN electrode smoothed the discontinuity in both the resistance switching processes by DC and pulse voltages. On the other hands, digital resistance switching was dominant in TiN/TaO<inf>x</inf>/Ta<inf>2</inf>O<inf>5</inf>/Pt device. We deduce that the electrodes reactivity with oxygen plays a key role for the analog resistance switching.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrode material dependence of resistive switching behavior in Ta2O5 resistive analog neuromorphic device\",\"authors\":\"H. Shima, Makoto Takahashi, Y. Naitoh, H. Akinaga\",\"doi\":\"10.1109/EDTM.2018.8421520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-speed analog resistance switching characteristics were demonstrated in TiN/TaO x/ Ta<inf>2</inf>O<inf>5</inf>/TiN resistive analog neuromorphic device (RAND). An introduction of the TiN electrode smoothed the discontinuity in both the resistance switching processes by DC and pulse voltages. On the other hands, digital resistance switching was dominant in TiN/TaO<inf>x</inf>/Ta<inf>2</inf>O<inf>5</inf>/Pt device. We deduce that the electrodes reactivity with oxygen plays a key role for the analog resistance switching.\",\"PeriodicalId\":418495,\"journal\":{\"name\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM.2018.8421520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM.2018.8421520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrode material dependence of resistive switching behavior in Ta2O5 resistive analog neuromorphic device
High-speed analog resistance switching characteristics were demonstrated in TiN/TaO x/ Ta2O5/TiN resistive analog neuromorphic device (RAND). An introduction of the TiN electrode smoothed the discontinuity in both the resistance switching processes by DC and pulse voltages. On the other hands, digital resistance switching was dominant in TiN/TaOx/Ta2O5/Pt device. We deduce that the electrodes reactivity with oxygen plays a key role for the analog resistance switching.
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