P和Ga掺杂gnfet气体吸附传感器的建模

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7132019

S. R. Shyam Sumukh, Akshay Moudgil, S. Swaminathan

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引用次数: 0

摘要

本文重点研究了基于Sentaurus和VASP的顶部和底部门控纳米-GNRFET气体传感模型。模型分别掺杂磷和镓，采用32nm工艺对上门控和350nm工艺对下门控gnfet进行建模。在气体的影响下，掺杂的GNRFET在阈值电压和IDmax上有很大的变化，使得所提出的模型有希望用于纳米尺度的N2O和O2气体传感

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Modelling of a sensor for gas adsorption on P and Ga doped GNRFET

This paper focuses on the modelling of a Top and Bottom gated Nano -GNRFET for gas sensing using Sentaurus and VASP. The models are doped separately with Phosphorus and Gallium. 32nm fabrication technology is used for modelling the Top Gated and 350nm for Bottom gated GNRFET. Under the influences of gases, doped GNRFET has a considerable change in threshold voltage and IDmax making the proposed models promising candidates for Nano scale sensing of N2O and O2 gas.i

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2015 International Symposium on Next-Generation Electronics (ISNE)

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