静态信号电迁移分析的一种实用方法

Nagaraj Ns, F. Cano, H. Haznedar, D. Young
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引用次数: 33

摘要

一些文献表明,反扫效应可能使电迁移(EM)在信号线中不再是问题。然而,只有当正、负电流脉冲的形状紧密匹配时,才会出现这种情况。此外,随着性能压力的增加,峰值电流值超出了电迁移模型有效的范围。因此,在TI的TMS320c6201 DSP芯片的设计过程中,确定了需要对信号线段中的电流密度进行限制,并对设计中的每个网进行检查。对大型设计的所有网进行动态电流密度分析,计算成本非常高。在本文中,我们描述了一种实用的CAD方法,用于基于大细胞的设计的静态信号电迁移分析。我们介绍了该方法在TMS320c6201上应用的结果和一些观察结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A practical approach to static signal electromigration analysis
Some literature suggests that sweep back effects may make electromigration (EM) a non-issue in signal lines. However this is only the case when the shape of the positive and negative current pulses are closely matched. Moreover, as performance pressures increase, the peak current values are exceeding the range for which electromigration models are valid. Thus, during the design of TI's TMS320c6201 DSP chip, it was determined that limits needed to be placed on the current densities in signal-line segments, and that every net in the design should be checked. Dynamic current density analysis on all nets of a large design is computationally very expensive. In this paper, we describe a practical CAD methodology for a static, signal electromigration analysis for large cell-based designs. We present results and some observations from application of this methodology on the TMS320c6201.
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