{"title":"高温非冷却激光器","authors":"C. Zah, R. Bhat, T. Lee","doi":"10.1364/slada.1995.wa.2","DOIUrl":null,"url":null,"abstract":"An uncooled laser transmitter is cheaper and more reliable than a\n thermo-electrically cooled laser transmitter because of its simplicity\n in packaging. A low-cost, highly-reliable uncooled laser may have a\n strong influence on pushing fiber deployment closer to the home. For\n loop applications, the laser transmitter must operate reliably over\n the temperature range from -40 to 85°C. It is rather difficult to make\n high performance uncooled lasers in the long wavelength region\n (1.3-1.55 μm) using the conventional\n GaxIn1-xASyP1-y/InP\n materials system because the laser temperature performance suffers\n from Auger recombination in the low bandgap material and poor electron\n confinement resulting from the small conduction band offset\n (ΔEc=0.4ΔEg). We will discuss the design of\n uncooled lasers to minimize the changes in both threshold current and\n slope efficiency over the temperature range from -40 to 85 °C. To\n prevent carrier overflow under high-temperature operation, the\n electron confinement energy is increased by using the\n AlxGayIn1-x-yAs/InP materials system\n instead of the conventional\n GaxIn1-xASyP1-y/InP\n materials system. Experimental results of the\n AlxGayIn1-x-yAs/InP strained quantum\n well lasers show superior high temperature performances as discussed\n below.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Temperature Uncooled Lasers\",\"authors\":\"C. Zah, R. Bhat, T. Lee\",\"doi\":\"10.1364/slada.1995.wa.2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An uncooled laser transmitter is cheaper and more reliable than a\\n thermo-electrically cooled laser transmitter because of its simplicity\\n in packaging. A low-cost, highly-reliable uncooled laser may have a\\n strong influence on pushing fiber deployment closer to the home. For\\n loop applications, the laser transmitter must operate reliably over\\n the temperature range from -40 to 85°C. It is rather difficult to make\\n high performance uncooled lasers in the long wavelength region\\n (1.3-1.55 μm) using the conventional\\n GaxIn1-xASyP1-y/InP\\n materials system because the laser temperature performance suffers\\n from Auger recombination in the low bandgap material and poor electron\\n confinement resulting from the small conduction band offset\\n (ΔEc=0.4ΔEg). We will discuss the design of\\n uncooled lasers to minimize the changes in both threshold current and\\n slope efficiency over the temperature range from -40 to 85 °C. To\\n prevent carrier overflow under high-temperature operation, the\\n electron confinement energy is increased by using the\\n AlxGayIn1-x-yAs/InP materials system\\n instead of the conventional\\n GaxIn1-xASyP1-y/InP\\n materials system. Experimental results of the\\n AlxGayIn1-x-yAs/InP strained quantum\\n well lasers show superior high temperature performances as discussed\\n below.\",\"PeriodicalId\":365685,\"journal\":{\"name\":\"Semiconductor Lasers Advanced Devices and Applications\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Lasers Advanced Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/slada.1995.wa.2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Lasers Advanced Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/slada.1995.wa.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An uncooled laser transmitter is cheaper and more reliable than a
thermo-electrically cooled laser transmitter because of its simplicity
in packaging. A low-cost, highly-reliable uncooled laser may have a
strong influence on pushing fiber deployment closer to the home. For
loop applications, the laser transmitter must operate reliably over
the temperature range from -40 to 85°C. It is rather difficult to make
high performance uncooled lasers in the long wavelength region
(1.3-1.55 μm) using the conventional
GaxIn1-xASyP1-y/InP
materials system because the laser temperature performance suffers
from Auger recombination in the low bandgap material and poor electron
confinement resulting from the small conduction band offset
(ΔEc=0.4ΔEg). We will discuss the design of
uncooled lasers to minimize the changes in both threshold current and
slope efficiency over the temperature range from -40 to 85 °C. To
prevent carrier overflow under high-temperature operation, the
electron confinement energy is increased by using the
AlxGayIn1-x-yAs/InP materials system
instead of the conventional
GaxIn1-xASyP1-y/InP
materials system. Experimental results of the
AlxGayIn1-x-yAs/InP strained quantum
well lasers show superior high temperature performances as discussed
below.