{"title":"MBE生长的LT-InAlAs的电流-电压和低频噪声测量","authors":"C. Meva'a, P. Rojo-Romeo, X. Letartre","doi":"10.1109/SIM.1996.570932","DOIUrl":null,"url":null,"abstract":"The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron trap families E1, E2, and E3 in the material bandgap. The presence of these traps give rise to a defect-assisted tunneling current in the space-charge region of Schottky diodes at low forward and reverse biases. The observed low frequency l/fl in reverse bias is interpreted in terms of fluctuations of the Schottky barrier height.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current-voltage and low frequency noise measurements on LT-InAlAs grown by MBE\",\"authors\":\"C. Meva'a, P. Rojo-Romeo, X. Letartre\",\"doi\":\"10.1109/SIM.1996.570932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron trap families E1, E2, and E3 in the material bandgap. The presence of these traps give rise to a defect-assisted tunneling current in the space-charge region of Schottky diodes at low forward and reverse biases. The observed low frequency l/fl in reverse bias is interpreted in terms of fluctuations of the Schottky barrier height.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current-voltage and low frequency noise measurements on LT-InAlAs grown by MBE
The properties of InAlAs layers grown lattice matched to InP by molecular beam epitaxy (MBE) were investigated. For a large range of growth conditions (temperature, V/III beam equivalent pressure ratio, doping level), we have detected 3 deep electron trap families E1, E2, and E3 in the material bandgap. The presence of these traps give rise to a defect-assisted tunneling current in the space-charge region of Schottky diodes at low forward and reverse biases. The observed low frequency l/fl in reverse bias is interpreted in terms of fluctuations of the Schottky barrier height.
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