所选半导体器件的数值模拟

27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. Pub Date : 2004-05-13 DOI:10.1109/ISSE.2004.1490390

V. Palankovski, S. Selberherr

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引用次数: 0

摘要

本文综述了基于SiGe/Si和III-V化合物半导体的工业异质结构器件，并对其进行了数值模拟分析。解决了关键的建模问题。本文给出了异质结双极晶体管(hbt)和场效应晶体管(fet)的二维水动力分析结果，并与实测数据吻合良好。

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Numerical simulation of selected semiconductor devices

We present a review of industrial heterostructure devices, based on SiGe/Si and III-V compound semiconductors, analyzed by means of numerical simulation. Critical modeling issues are addressed. Results from 2D hydrodynamic analyses of heterojunction bipolar transistors (HBTs) and field-effect transistors (FETs) are presented, and are in good agreement with measured data.

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来源期刊

27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004.

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