三维存储器模块

N. Takahashi, N. Senba, Y. Shimada, I. Morizaki, K. Tokuno
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引用次数: 6

摘要

近年来,电子设备对高封装密度和存储容量的需求不断增加。我们新的三维内存(3DM)模块满足了这一需求。该模块的尺寸与目前使用的单个内存封装(tsop: 17.4/spl倍/9.22/spl倍/1.2 mm)几乎相同,封装密度是其4倍。电性能优于TSOP,因为其导线长度约为TSOP导线的一半。此外,制造该模块的成本很低。本文报道了该模块的特点和制作过程。其设计理念是,将目前量产的存储器套在一起,生产下一代存储器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3-dimensional memory module
Demand has recently increased for high packaging density and memory capacity of memory modules for electronic equipment. Our new 3-Dimensional Memory (3DM) Module satisfies this demand. This module has almost the same size as single memory packages (TSOPs: 17.4/spl times/9.22/spl times/1.2 mm) currently being used, and a package density 4 times as large. Electrical performance is better than that of TSOPs because the length of its wires is about half that of TSOP's wires. Moreover, the cost to fabricate this module is low. This paper reports the module's characteristics and fabrication process. The design concept is that next-generation memory devices will be produced by casing current mass-produced memory devices.
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