一种改进的FDSOI三门和其他多栅极纳米线mosfet的迁移率模型，可降至纳米尺度

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-16 DOI:10.1109/S3S.2017.8309241

M. Cassé, J. Pelloux-Prayer, Z. Zeng, Y. Niquet, F. Triozon, S. Barraud, G. Reimbold

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引用次数: 1

摘要

我们在此提出FDSOI三门纳米线晶体管中载流子迁移率随尺寸变化的半解析模型的实验验证。该模型基于方形窄Si NW和宽FDSOI或垂直双栅(DG)极限情况之间的简单插值。我们证明了它适用于各种H和W尺寸的NMOS和PMOS器件，以及不同的通道方向。该模型对较为简单的facet模型进行了显著改进，并充分证明了拐角区域的贡献。

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An improved mobility model for FDSOI TriGate and other multi-gate Nanowire MOSFETs down to nanometer-scaled dimensions

We hereby present the experimental validation of a semi-analytical model for the size-dependent carrier mobility in FDSOI TriGate Nanowire transistors. The model is based on simple interpolation between a square narrow Si NW and wide FDSOI or vertical Double Gate (DG) limiting cases. We demonstrate its suitability to NMOS and PMOS devices with various H and W dimensions, as well as for different channel orientations. This model brings significant improvement to the simpler facets model, and evidences the contribution of corner areas.

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2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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