非对称沟槽氧化物具有优异的长期开关性能的IGBT

C. Sandow, P. Brandt, H. Felsl, F. Niedernostheide, F. Pfirsch, H. Schulze, A. Stegner, F. Umbach, F. Santos, W. Wagner
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引用次数: 8

摘要

IGBT芯片的不断缩小需要新的设计方法,以确保在芯片寿命期间可靠和稳定的开关操作。我们展示了一种新的非对称栅氧化物概念,设计了可变厚度,可在沟槽igbt中稳定长期运行,并在不牺牲电气性能的情况下减少开关延迟和栅极电荷。这些主张得到了长期重复开关实验以及校准模型上的TCAD模拟的支持。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
IGBT with superior long-term switching behavior by asymmetric trench oxide
The continued shrinking of IGBT chips calls for new design approaches to ensure reliable and stable switching operation during the chip lifetime. We demonstrate a new asymmetric gate oxide concept with a designed variable thickness that leads to stable long-term operation in trench IGBTs and reduces the switching delay and the gate charge without sacrificing electrical performance. These claims are supported by longer-term repetitive switching experiments as well as TCAD simulations on a calibrated model.
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