基于0.18μm CMOS的0.3V 10bit 7.3fJ/转换阶SAR ADC

C. Hsieh, Shen-Iuan Liu
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引用次数: 15

摘要

采用0.18 μm CMOS工艺实现了一个0.3V的10位轨轨逐次逼近寄存器(SAR)模数转换器(ADC)。在电源为0.3V时,采用双升压采样开关和电源升压时域比较器分别降低开关导通电阻和提高转换时间。为了降低功率,采用差分动态开关控制数模转换器的分频电容。该ADC的SNDR和SFDR分别为54.57dB和69.89dB。功率消耗15.9nW在5k /s从0.3V电源。该ADC的品质因数为7.3fJ/转换步长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.3V 10bit 7.3fJ/conversion-step SAR ADC in 0.18μm CMOS
A 0.3V 10-bit rail-to-rail successive approximation register (SAR) analog-to-digital converter (ADC) is realized in 0.18-μm CMOS process. While the supply is 0.3V, a double-boosted sampling switch and a supply-boosted time-domain comparator are proposed to decrease the on-resistance of the switches and improve the conversion time, respectively. To lower the power, differential dynamic switches are used to control the splitting capacitors of the digital-to-analog converter. This ADC achieves the SNDR of 54.57dB and the SFDR of 69.89dB, respectively. The power consumes 15.9nW at 5kS/s from a 0.3V supply. A figure-of-merit of 7.3fJ/conversion-step for this ADC is achieved.
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