SiGe技术作为毫米波平台:缩放问题，可靠性物理，电路性能和新机遇

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751065

J. Cressler, C. Coen, S. Zeinolabedinzadeh, P. Song, R. Schmid, Michael A. Oakley, P. Chakraborty

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引用次数: 6

摘要

本文回顾了最近的工作，旨在全面评估SiGe技术支持新兴毫米波和亚毫米波集成电路应用的潜力。解决了毫米波CMOS的缩放限制，可靠性限制和限制，其次是各种毫米波和亚毫米波SiGe电路，作为许多等待机会的例子。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiGe Technology as a Millimeter-Wave Platform: Scaling Issues, Reliability Physics, Circuit Performance, and New Opportunities

This paper reviews recent work aimed at a comprehensive assessment of the potential of SiGe technology to support emerging millimeter-wave (mm-wave) and sub-mm-wave integrated circuit applications. Scaling limits, reliability constraints, and the limits of CMOS for mm-wave are addressed, followed by a diverse variety of mm-wave and sub-mm-wave SiGe circuits that are offered as examples of the many opportunities awaiting.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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