A novel dual gated lateral MOS-bipolar power device

A novel CMOS compatible lateral dual gated MOS-bipolar transistor (DGMBT) is demonstrated through experiments. The device is configured by a parallel combination of an LDMOS and an LIGBT. The device can be made to operate in different modes by controlling the low voltage bias on the LDMOS and the LIGBT gates. In the mixed mode, unlike an anode shorted LIGBT, this device shows a smooth transition from the MOSFET mode to a bipolar mode without any snapback. By controlling the gate bias at the LIGBT end, the level of injection can be controlled. The anode short ensures that the device turns off much faster than a conventional LIGBT.