F. Kish, D. Defevere, D. A. Vanderwater, G. Trott, R. J. Weissb
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High luminous flux semiconductor wafer-bonded (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP large area light-emitting diodes
Significant improvements have been achieved in the efficiency of visible 9 light-emitting diodes (LEDs) in the green to red portion of the spectrum by employin AIGalnP/GaAs emitters formed by metalorganic chemical vapor deposition (MOCVD). Recently, it has been demonstrated that the extraction efficiency of these devices (grown on absorbing GaAs substrates) can be doubled by semiconductor wafer bonding a transparent GaP substrate in place of the GaAs. The resulting transparent-substrate (TS) AIGalnP/GaP LEDs exhibit luminous efficiencies (>15 ImNV) that exceed that of a typical 60 W tungsten sources in the yellow-green to red (570-640 nm) portion of the spectrum.2 Despite the high efficiency of these sources, LEDs are typically limited to low flux (power) applications as a result of the high thermal resistance (220°CA#) of the LED lamps.
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