压包封装的热改进:在钼衬底和碳化硅芯片之间有薄银夹层的压力依赖热接触电阻

Z. Toth-Pal, Yafan Zhang, T. Hammam, H. Nee, M. Bakowski
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引用次数: 1

摘要

在典型的压封装和自由浮动封装中,芯片和基板之间的热接触电阻是功率模块冷却能力的主要限制因素。我们报道了一种新的,薄银层之间的钼衬底和芯片,以及它如何改善热接触。在不同压力下,测量了有银层和没有银层的热接触电阻。对SiC芯片和钼衬底的表面粗糙度进行了表征。在三种不同的加热功率水平下测量了热接触电阻。结果表明,仅用几微米的银夹层就能显著降低热接触电阻。通过流体动力学类型的三维模拟,比较了有银中间层和没有银中间层的温度分布,也证明了银中间层改善的冷却效果。这些结果预测了压包封装中可能的热改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal improvement of press-pack packages: Pressure dependent thermal contact resistance with a thin silver interlayer between molybdenum substrate and silicon carbide chip
In typical press-pack, free-floating packages the thermal contact resistance between chip and substrate is a major limiting factor for the cooling ability of the power module. We report an introduction of a new, thin Silver interlayer between Molybdenum substrate and chip, and how it improves the thermal contact. The thermal contact resistances were measured with and without a Silver interlayer at different pressures. The surface roughness of the SiC chip and the Molybdenum substrate were characterized. The thermal contact resistances were measured at three different heating power levels. The results show a significant reduction of the thermal contact resistance with only a few micrometer Silver interlayer. The improved cooling effect of a Silver interlayer was also demonstrated with a fluid dynamics type of 3 D simulation comparing temperature distributions with and without a Silver interlayer. These results project a possible thermal improvement in press-pack packages.
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