逻辑路径延迟分布和晶体管尺寸

A. Kabbani, D. Al-Khalili, A. Al-Khalili
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引用次数: 3

摘要

高性能设计的优点是速度快、功耗低、硅面积小。面积优化可以在设计抽象的不同层次上实现。本文提出了一种基于无库合成和晶体管尺寸的区域延迟优化技术。该技术可用于优化路径延迟或最小化特定给定所需时间内的路径面积。它的产生取决于CMOS逆变器的延迟模型,修正的逻辑努力(MLE)模型[A]。Kabbani, D. Al-Khalili, and A. J. Al-Khalili(2004)]和CMOS栅极跃迁时间模型[A]。Kabbani(2004)]。与Synopsys的设计编译器相比,所提出的技术实现了更好的性能。在给定的所需时间内,该方法平均可节省约50%的面积延迟积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Logical path delay distribution and transistor sizing
The merits of high performance design are high speed, low power consumption, and small silicon area. Area optimization could be achieved at different levels of the design abstraction. In this paper area-delay optimization technique that depends on library-free synthesis and transistor sizing is presented. This technique can be used to optimize the path delay or to minimize the path area for a specific given required time. It is generated depending on the CMOS inverter delay model, modified logical effort (MLE) model [A. Kabbani, D. Al-Khalili, and A. J. Al-Khalili (2004)] and the CMOS gate transition time model [A. Kabbani (2004)]. The proposed technique achieves better performance as compared to Synopsys's design compiler. For a given required time, the presented technique saves on area-delay product by about 50% on the average.
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