SI - GaAs粒子探测器检测参数与起始材料物理性质的关系

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.570881

F. Dubecký, J. Darmo, M. Krempaský, J. Betkó, I. Bešše, M. Pikna, A. Šatka, J. Oswald, P. Pelfer

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引用次数: 0

摘要

研究了深能级和材料不均匀性对掺cr和未掺cr半绝缘gaasb粒子探测器参数的影响。结果表明，探测器的电荷收集效率和能量分辨率受起始材料的物理性质的影响较大。

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On relation between detection parameters of SI GaAs particle detectors and physical properties of starting materials

The role of deep levels and material inhomogeneities is studied in regard to their influence on the parameters of Cr-doped and undoped bulk semi-insulating GaAsb-based particle detectors. It is shown that the charge collection efficiency and the energy resolution of detectors is strongly affected by physical properties of starting material.

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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