系统901:低K，铜MCM-C封装

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93) Pub Date : 1993-06-01 DOI:10.1109/ECTC.1993.346746

P. Donohue, J. P. Page, E. Thiele, Y. Hu, M. Saltzberg, S. A. Gallo

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引用次数: 0

摘要

为了满足当今更大更快的集成电路的封装需求，杜邦电子开发了901系统。它是基于可结晶堇青石电介质，用于低K，高强度，硅匹配的TCE，结合高导电性铜金属化。在H/sub - 2/O/N/sub - 2/气氛中使用铜电极或在烧坏/还原/烧结顺序中使用CuO电极都很容易进行加工。在这两种模式下，电路都满足封装性能要求，特别是无扭曲弯曲，而不需要约束烧结。这些性能的实现需要了解影响烧结的力的来源，并开发改性剂来控制这些力。

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System 901: low K, copper MCM-C packaging

To meet the packaging needs of today's larger faster IC's DuPont Electronics has developed system 901. It is based on a crystallizable cordierite dielectric for low K, high strength, silicon matched TCE, combined with high conductivity copper metallization. Processing is easily carried out either with copper electrodes in a H/sub 2/O/N/sub 2/ atmosphere or with CuO electrodes in a burnout/reduction/sinter sequence. In both modes, circuits meet packaging performance requirements, especially distortion-free camber, without the need for constrained-sintering. The achievement of these properties has required an understanding of the origin of the forces affecting sintering, and the development of modifiers to control those forces.<>

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Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)

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