W. Hsu, T. Kim, H. Chou, A. Rai, M. J. Arellano-Jimenez, M. José-Yacamán, M. Palard, S. Banerjee
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Enhancing the performance of GepFETs using novel BF+ implantation
Ge p+/n junctions with a high B activation level ( 2x1020 cm-3) and favorable diffusion behavior (reduced junction depth are demonstrated using novel BF+ implantation. These junctions are integrated with GeO2 high-k gate stack to obtain a high on/off ratio Ge pFET with an enhancement of ON current. With the heavier mass compared to B+, BF+ may offer higher throughput for low-energy implantation applications, which can be essential for Ge FETs to suppress the short channel effect from the higher dielectric constant of Ge.
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