{"title":"一个0.5 v, 3mw, 54/spl倍/54倍倍的倍频器,采用三v /sub / CMOS/SIMOX电路方案","authors":"K. Fujii, T. Douseki","doi":"10.1109/SOI.1999.819859","DOIUrl":null,"url":null,"abstract":"Summary form only given. Sub-1 V CMOS/SOI circuit technology is the most effective candidate for ultra-low-power applications in future ULSIs. We have proposed a triple-V/sub th/ CMOS/SIMOX circuit (Fujii et al., 1998; Douseki et al., 1998) that operates at an ultra low supply voltage of less than 0.5 V. The circuit consists of fully-depleted low- and medium-V/sub th/ CMOS logic gates and partially-depleted high-V/sub th/ power switch transistors. The low-V/sub th/ CMOS logic gates in critical paths and medium-V/sub th/ logic gates in noncritical paths achieve fast operation and leakage current reduction in the active mode. In addition, high-V/sub th/ power-switch transistors dramatically cut the leakage current in the standby mode. To improve circuit performance, the delay time of the critical path in the low-V/sub th/ logic blocks should be reduced and lowand medium-V/sub th/ logic gates should be assigned without any loss of speed. In this paper, we describe a triple-V/sub th/ 54/spl times/54-b multiplier that uses a 108-b adder with a source-controlled transmission-gate multiplexer in the critical path and a Wallace tree block in which low- and medium-V/sub th/ logic gates are automatically assigned using EDA tools.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.5-V, 3-mW, 54/spl times/54-b multiplier with a triple-V/sub th/ CMOS/SIMOX circuit scheme\",\"authors\":\"K. Fujii, T. Douseki\",\"doi\":\"10.1109/SOI.1999.819859\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Sub-1 V CMOS/SOI circuit technology is the most effective candidate for ultra-low-power applications in future ULSIs. We have proposed a triple-V/sub th/ CMOS/SIMOX circuit (Fujii et al., 1998; Douseki et al., 1998) that operates at an ultra low supply voltage of less than 0.5 V. The circuit consists of fully-depleted low- and medium-V/sub th/ CMOS logic gates and partially-depleted high-V/sub th/ power switch transistors. The low-V/sub th/ CMOS logic gates in critical paths and medium-V/sub th/ logic gates in noncritical paths achieve fast operation and leakage current reduction in the active mode. In addition, high-V/sub th/ power-switch transistors dramatically cut the leakage current in the standby mode. To improve circuit performance, the delay time of the critical path in the low-V/sub th/ logic blocks should be reduced and lowand medium-V/sub th/ logic gates should be assigned without any loss of speed. In this paper, we describe a triple-V/sub th/ 54/spl times/54-b multiplier that uses a 108-b adder with a source-controlled transmission-gate multiplexer in the critical path and a Wallace tree block in which low- and medium-V/sub th/ logic gates are automatically assigned using EDA tools.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819859\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.5-V, 3-mW, 54/spl times/54-b multiplier with a triple-V/sub th/ CMOS/SIMOX circuit scheme
Summary form only given. Sub-1 V CMOS/SOI circuit technology is the most effective candidate for ultra-low-power applications in future ULSIs. We have proposed a triple-V/sub th/ CMOS/SIMOX circuit (Fujii et al., 1998; Douseki et al., 1998) that operates at an ultra low supply voltage of less than 0.5 V. The circuit consists of fully-depleted low- and medium-V/sub th/ CMOS logic gates and partially-depleted high-V/sub th/ power switch transistors. The low-V/sub th/ CMOS logic gates in critical paths and medium-V/sub th/ logic gates in noncritical paths achieve fast operation and leakage current reduction in the active mode. In addition, high-V/sub th/ power-switch transistors dramatically cut the leakage current in the standby mode. To improve circuit performance, the delay time of the critical path in the low-V/sub th/ logic blocks should be reduced and lowand medium-V/sub th/ logic gates should be assigned without any loss of speed. In this paper, we describe a triple-V/sub th/ 54/spl times/54-b multiplier that uses a 108-b adder with a source-controlled transmission-gate multiplexer in the critical path and a Wallace tree block in which low- and medium-V/sub th/ logic gates are automatically assigned using EDA tools.