陡坡隧道场效应晶体管的基本原理和现状

A. Seabaugh
{"title":"陡坡隧道场效应晶体管的基本原理和现状","authors":"A. Seabaugh","doi":"10.1109/ESSCIRC.2011.6044914","DOIUrl":null,"url":null,"abstract":"The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"38 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Fundamentals and current status of steep-slope tunnel field-effect transistors\",\"authors\":\"A. Seabaugh\",\"doi\":\"10.1109/ESSCIRC.2011.6044914\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.\",\"PeriodicalId\":239979,\"journal\":{\"name\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"38 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2011.6044914\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2011.6044914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

隧道场效应晶体管(ttfet)利用金属氧化物半导体MOS结构来控制p+n+结中的齐纳隧道电流。综述了对具有陡直逆亚阈值斜率的tfet的认识和发展现状。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fundamentals and current status of steep-slope tunnel field-effect transistors
The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信