GaAs mesfet的互调失真与非门控凹槽宽度的关系

1999 IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications (Cat. No. 99TH8390) Pub Date : 1900-01-01 DOI:10.1109/MTTTWA.1999.755126

Y. Tkachenko, D. Bartle, C. Wei, P. Dicarlo

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引用次数: 0

摘要

发现GaAs MESFET分立器件和MMIC PA器件的调制间失真受非门控凹槽宽度的影响。非门控凹槽宽度超过105纳米的器件表现出软增益压缩和超规范互调性能。线性度下降表现为IM3较差，IM5对输出功率的依赖性显著不同，而软增益压缩导致功率过早饱和，功率增益和功率附加效率降低。负载拉力结果、波形测量值与两级线性功率放大器性能数据具有良好的相关性。这项工作为高线性放大器应用的最佳性能提供了一个关键的器件参数。

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The correlation between inter-modulation distortion of GaAs MESFETs and ungated recess width

Inter-modulation distortion of GaAs MESFET discrete and MMIC PA devices was found to be effected by the width of the ungated recess. Devices with ungated recess width in excess of 105 nm exhibit soft gain compression and out-of-spec inter-modulation performance. Degraded linearity is manifested in worse IM3 and significantly different IM5 dependence on the output power, whereas soft gain compression leads to premature power saturation, smaller power gain and power-added efficiency. Good correlation between the loadpull results, waveform measurements and 2-stage linear power amplifier performance data was obtained. This work provides insight into a critical device parameter for optimum performance of high linearity amplifier applications.

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1999 IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications (Cat. No. 99TH8390)

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