块状氮化镓晶体的氨热技术

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516027

D. Ehrentraut, T. Fukuda

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引用次数: 0

摘要

块状氮化镓晶体的生长只能在气相或液相中进行。氨热法正在成为氢化物气相生长法的潜在替代品。简要介绍了氮化镓的酸性氨热生长技术和一些最新的研究成果。

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Ammonothermal technology for bulk gallium nitride crystals

The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.

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来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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