EOS/ESD应力下电路级电热模拟的新算法

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319) Pub Date : 1997-10-13 DOI:10.1109/IRWS.1997.660305

T. Li, C. Tsai, Y. Huh, E. Rosenbaum, S. Kang

{"title":"EOS/ESD应力下电路级电热模拟的新算法","authors":"T. Li, C. Tsai, Y. Huh, E. Rosenbaum, S. Kang","doi":"10.1109/IRWS.1997.660305","DOIUrl":null,"url":null,"abstract":"Summary form only given. ESD protection circuits are designed to meet certain specifications such as human body model (HBM) voltage. Electrothermal circuit simulation can be of use in protection circuit design. In this work, we propose a new algorithm to evaluate transient device temperatures, such as the drain junction temperature of NMOS devices, so that the electrothermal circuit simulation can be performed accurately. Using the electrothermal circuit simulator, we can examine device heating during HBM testing.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A new algorithm for circuit-level electrothermal simulation under EOS/ESD stress\",\"authors\":\"T. Li, C. Tsai, Y. Huh, E. Rosenbaum, S. Kang\",\"doi\":\"10.1109/IRWS.1997.660305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. ESD protection circuits are designed to meet certain specifications such as human body model (HBM) voltage. Electrothermal circuit simulation can be of use in protection circuit design. In this work, we propose a new algorithm to evaluate transient device temperatures, such as the drain junction temperature of NMOS devices, so that the electrothermal circuit simulation can be performed accurately. Using the electrothermal circuit simulator, we can examine device heating during HBM testing.\",\"PeriodicalId\":193522,\"journal\":{\"name\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.1997.660305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1997.660305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

只提供摘要形式。ESD保护电路的设计要满足一定的规格，如HBM (human body model)电压。电热电路仿真可用于保护电路的设计。在这项工作中，我们提出了一种新的算法来评估瞬态器件温度，例如NMOS器件的漏极结温度，从而可以准确地进行电热电路模拟。利用电热电路模拟器，我们可以在HBM测试过程中检测器件的发热情况。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A new algorithm for circuit-level electrothermal simulation under EOS/ESD stress

Summary form only given. ESD protection circuits are designed to meet certain specifications such as human body model (HBM) voltage. Electrothermal circuit simulation can be of use in protection circuit design. In this work, we propose a new algorithm to evaluate transient device temperatures, such as the drain junction temperature of NMOS devices, so that the electrothermal circuit simulation can be performed accurately. Using the electrothermal circuit simulator, we can examine device heating during HBM testing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)

自引率

0.00%

发文量