端氢金刚石mosfet直流特性的物理模拟

2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) Pub Date : 2017-12-01 DOI:10.1109/EDAPS.2017.8276947

Yu Fu, Yuehang Xu, R. Xu, Jianjun Zhou, Y. Kong

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引用次数: 4

摘要

提出了一种基于金刚石薄膜的金属半导体场效应晶体管(MOSFET)物理仿真模型。利用Silvaco Atlas TCAD工具分析了所提出的金刚石MOSFET的直流特性。仿真结果表明，在−4V的正栅极偏置VGS下，饱和漏极电流大于130mA/mm。总的来说，我们的模拟结果与实验结果基本一致，证明了我们的工作对研究和预测金刚石场效应管是有用的。

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Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs

A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.

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2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)

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