{"title":"单片低噪声放大器SiGe HBTs噪声性能的几何优化","authors":"Pei Shen, Wanrong Zhang, Hongyun Xie, D. Jin","doi":"10.1109/ASICON.2009.5351284","DOIUrl":null,"url":null,"abstract":"The influence of various geometry sizes of SiGe HBTs on noise performance of the monolithic Low noise amplifiers(LNAs) is investigated in this paper. Four types of LNAs using SiGe HBTs with different emitter widths, emitter lengths and emitter strip numbers are fabricated in a 0.35-µm Si BiCMOS process technology. The die areas are only 0.2mm<sup>2</sup> due to the absence of inductors. The noise figure(NF), associated gain(G<inf>A</inf>) and the optimum source resistance(R<inf>s,opt</inf>) of the LNAs are compared. Simplified analytical expressions of NF and R<inf>s,opt</inf> are presented to give additional insight. Geometry scaling data show that the LNA using SiGe HBT with A<inf>E</inf>=4×40×4µm<sup>2</sup> has the minimum NF of 2.7dB, the maximum gain of 26.7dB and the optimum R<inf>s,opt</inf> of nearly 50Ω compared to other devices geometries. These experiment results provide a guide of device geometry optimizing to develop monolithic LNA for lower noise application<sup>1</sup>.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Geometry optimization of SiGe HBTs for noise performance of the monolithic Low noise amplifier\",\"authors\":\"Pei Shen, Wanrong Zhang, Hongyun Xie, D. Jin\",\"doi\":\"10.1109/ASICON.2009.5351284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of various geometry sizes of SiGe HBTs on noise performance of the monolithic Low noise amplifiers(LNAs) is investigated in this paper. Four types of LNAs using SiGe HBTs with different emitter widths, emitter lengths and emitter strip numbers are fabricated in a 0.35-µm Si BiCMOS process technology. The die areas are only 0.2mm<sup>2</sup> due to the absence of inductors. The noise figure(NF), associated gain(G<inf>A</inf>) and the optimum source resistance(R<inf>s,opt</inf>) of the LNAs are compared. Simplified analytical expressions of NF and R<inf>s,opt</inf> are presented to give additional insight. Geometry scaling data show that the LNA using SiGe HBT with A<inf>E</inf>=4×40×4µm<sup>2</sup> has the minimum NF of 2.7dB, the maximum gain of 26.7dB and the optimum R<inf>s,opt</inf> of nearly 50Ω compared to other devices geometries. These experiment results provide a guide of device geometry optimizing to develop monolithic LNA for lower noise application<sup>1</sup>.\",\"PeriodicalId\":446584,\"journal\":{\"name\":\"2009 IEEE 8th International Conference on ASIC\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE 8th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2009.5351284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 8th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2009.5351284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
本文研究了不同几何尺寸的SiGe HBTs对单片低噪声放大器(LNAs)噪声性能的影响。采用0.35µm Si BiCMOS工艺技术，采用不同发射极宽度、发射极长度和发射极条数的SiGe HBTs制备了四种类型的LNAs。由于没有电感器，芯片面积仅为0.2mm2。比较了lna的噪声系数(NF)、相关增益(GA)和最佳源电阻(Rs,opt)。简化的解析表达式的NF和Rs,opt给出了额外的见解。几何缩放数据表明，与其他器件相比，采用AE=4×40×4µm2的SiGe HBT的LNA的最小NF为2.7dB，最大增益为26.7dB，最佳Rs选择接近50Ω。这些实验结果为器件几何优化提供了指导，以开发低噪声应用的单片LNA。
Geometry optimization of SiGe HBTs for noise performance of the monolithic Low noise amplifier
The influence of various geometry sizes of SiGe HBTs on noise performance of the monolithic Low noise amplifiers(LNAs) is investigated in this paper. Four types of LNAs using SiGe HBTs with different emitter widths, emitter lengths and emitter strip numbers are fabricated in a 0.35-µm Si BiCMOS process technology. The die areas are only 0.2mm2 due to the absence of inductors. The noise figure(NF), associated gain(GA) and the optimum source resistance(Rs,opt) of the LNAs are compared. Simplified analytical expressions of NF and Rs,opt are presented to give additional insight. Geometry scaling data show that the LNA using SiGe HBT with AE=4×40×4µm2 has the minimum NF of 2.7dB, the maximum gain of 26.7dB and the optimum Rs,opt of nearly 50Ω compared to other devices geometries. These experiment results provide a guide of device geometry optimizing to develop monolithic LNA for lower noise application1.
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