隔离栅InAs/AlSb HEMTs:蒙特卡罗研究

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516410

H. Rodilla, T. González, M. Malmkvist, E. Lefebvre, G. Moschetti, J. Grahn, J. Mateos

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引用次数: 1

摘要

在这项工作中，我们提出了一种蒙特卡罗研究，研究了在InAs/AlSb高电子迁移率晶体管(hemt)中隔离栅极的天然氧化物的存在对其直流和交流性能的影响。在低VDS情况下，冲击电离不重要，模拟结果与实验结果和小信号等效电路参数吻合较好。隔离栅和肖特基栅hemt的内禀MC模拟结果的比较表明，天然氧化物对器件的动态行为有很强的影响，主要是对Cgs、gm和fc的影响。

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Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on Cgs, gm and fc.

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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