4d过渡金属基NbAl2F4和TcAl2F4尖晶石的电磁性能比较

E. G. Özdemir
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引用次数: 0

摘要

利用WIEN2k程序研究了NbAl2F4尖晶石的半金属性质和TcAl2F4尖晶石的半导体特性。NbAl2F4尖晶石在上电子态表现为金属性质,而在下电子态表现为半导体性质。在NbAl2F4尖晶石中,GGA和GGA+mBJ的Eg带隙分别为1.551 eV和1.622 eV。EHM半金属带隙分别为0.410 eV和0.422 eV。在TcAl2F4尖晶石的上自旋状态下,GGA和GGA+mBJ方法的Eg值分别为1.199 eV和1.447 eV,而下自旋状态下的Eg值分别为1.281 eV和1.519 eV。当使用GGA+mBJ时,很容易观察到半导体特性的增加。计算NbAl2F4和TcAl2F4尖晶石的总磁矩分别为6.00µB/cell和10.0µB/cell。当仔细检查电子和磁矩值时,NbAl2F4和TcAl2F4尖晶石可以用作自旋电子应用中的替代化合物。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels
Half-metallic properties of NbAl2F4 spinel and semiconductor characteristics of TcAl2F4 spinel were investigated with the help of the WIEN2k program. NbAl2F4 spinel shows a metallic character in the up-electron states, while it has a semiconductor nature in the down-electron states. In NbAl2F4 spinel, the Eg bandgaps were calculated in GGA and GGA+mBJ 1.551 eV and 1.622 eV, respectively. The EHM half-metallic bandgaps were obtained 0.410 eV and 0.422 eV, respectively. In the up-spin states of TcAl2F4 spinel, Eg values were obtained 1.199 eV and 1.447 eV for the GGA and GGA+mBJ methods, respectively, while they were obtained 1.281 eV and 1.519 eV in the down-spin states, respectively. When GGA+mBJ is used, it is easily observed that the semiconductor characters increase. Total magnetic moments of NbAl2F4 and TcAl2F4 spinels were calculated 6.00 µB/cell and 10.0 µB/cell, respectively. When both electronic and magnetic moment values are carefully examined, NbAl2F4 and TcAl2F4 spinels can be used as alternative compounds in spintronic applications.
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