高电阻硅集成传输线:共面波导还是微带?

B. Rejaei, K. Ng, C. Floerkemeier, N. Pham, L. Nanver, J. Burghartz
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引用次数: 8

摘要

我们提出了高电阻硅衬底表面堆积层或反转层对传输线损耗影响的实验研究。结果表明,随着硅电阻率的减小,表面通道对总损耗的相对贡献越来越显著。实验表明,表面通道对集成微带损耗的影响远远低于同类共面波导,有利于微带在高电阻率硅衬底上的集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated Transmission Lines on High-Resistivity Silicon: Coplanar Waveguides or Microstrips?
We present an experimental study of the effect of the accumulation or inversion layer at the surface of a high-resistivity silicon substrate on the loss of transmission lines. It is shown that the relative contribution of the surface channel to the total loss becomes increasingly significant as the silicon resistivity decreases. The experiments demonstrate that the effect of the surface channel on the loss of an integrated microstrip is considerably lower than that of a comparable coplanar waveguide, favoring microstrips for integration on high-resistivity silicon substrates.
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