M. Okabe, Y. Okuno, T. Arakawa, I. Tomioka, T. Ohno, T. Noda, M. Hatanaka, Y. Kuramitsu
{"title":"具有连续航迹分配的CMOS栅极海阵列","authors":"M. Okabe, Y. Okuno, T. Arakawa, I. Tomioka, T. Ohno, T. Noda, M. Hatanaka, Y. Kuramitsu","doi":"10.1109/ISSCC.1989.48250","DOIUrl":null,"url":null,"abstract":"A macrocell architecture which is suitable for sea-of-gates (SOG) arrays and improves gate density is described. A layout scheme using a novel structure called column macrocell (CMC) implements every macrocell by stacking BCs (basic cells) along the BC column until enough gates are accumulated. In the CMC structure, the first-level wiring runs along the BC column, and the wiring channel width can be adjusted by 1-2 tracks. Therefore just as many tracks as are necessary in a channel are produced by first-level wiring. The effectiveness of the CMC structure is verified by implementing an SOG chip using LDD (lightly doped drain) PMOS and NMOS transistors with 0.8- mu m physical and 0.55- mu m effective gate length. The features of the CMC structure are compared with those of the RMC (row macrocell) structure.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A CMOS sea-of-gates array with continuous track allocation\",\"authors\":\"M. Okabe, Y. Okuno, T. Arakawa, I. Tomioka, T. Ohno, T. Noda, M. Hatanaka, Y. Kuramitsu\",\"doi\":\"10.1109/ISSCC.1989.48250\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A macrocell architecture which is suitable for sea-of-gates (SOG) arrays and improves gate density is described. A layout scheme using a novel structure called column macrocell (CMC) implements every macrocell by stacking BCs (basic cells) along the BC column until enough gates are accumulated. In the CMC structure, the first-level wiring runs along the BC column, and the wiring channel width can be adjusted by 1-2 tracks. Therefore just as many tracks as are necessary in a channel are produced by first-level wiring. The effectiveness of the CMC structure is verified by implementing an SOG chip using LDD (lightly doped drain) PMOS and NMOS transistors with 0.8- mu m physical and 0.55- mu m effective gate length. The features of the CMC structure are compared with those of the RMC (row macrocell) structure.<<ETX>>\",\"PeriodicalId\":385838,\"journal\":{\"name\":\"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-02-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1989.48250\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1989.48250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS sea-of-gates array with continuous track allocation
A macrocell architecture which is suitable for sea-of-gates (SOG) arrays and improves gate density is described. A layout scheme using a novel structure called column macrocell (CMC) implements every macrocell by stacking BCs (basic cells) along the BC column until enough gates are accumulated. In the CMC structure, the first-level wiring runs along the BC column, and the wiring channel width can be adjusted by 1-2 tracks. Therefore just as many tracks as are necessary in a channel are produced by first-level wiring. The effectiveness of the CMC structure is verified by implementing an SOG chip using LDD (lightly doped drain) PMOS and NMOS transistors with 0.8- mu m physical and 0.55- mu m effective gate length. The features of the CMC structure are compared with those of the RMC (row macrocell) structure.<>