辐照NMOS器件中总剂量效应的特征尺寸依赖性

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628121

Yujuan He, Yuan Liu, Xiaolan Zhou

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引用次数: 0

摘要

研究了特征尺寸分别为0.18μm、0.35μm和1μm的NMOS器件的总电离剂量辐照效应。由于栅极氧化层厚度的影响，随着特征尺寸的增大，总剂量辐照诱导的辐射阈值电压逐渐降低。但由于沟槽侧壁泄漏，辐照后NMOS器件的泄漏电流明显增大。

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Feature size dependence of total dose effects in the irradiated NMOS devices

Total ionizing dose irradiation effect in NMOS Devices with 0.18μm, 0.35μm and 1μm feature size was studied. Due to the thickness of gate oxide, radiation threshold voltage induced by total dose irradiation became lower as feature size increased. But the leakage current of NMOS devices induced by TID irradiation increased obviously because of trench sidewall leakage.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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