基于RRAM模块的无参考多电平忆阻器

Ahmed A. M. Emara, M. Ghoneima
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引用次数: 3

摘要

提出了一种鲁棒无参考多电平忆阻器的电阻式随机存储器(RRAM)模块。与类似的多电平rram相比,所提出的多电平模块不需要任何比较参考电平。由于使用差分1T2M存储单元,数据解码是用传统标准单元执行的。另一方面,不需要反馈回路来确保读、写和数据解码的正确性。此外,该模块的引脚与传统的6T SRAM模块兼容。给出了仿真结果,并与其他基于忆阻器的多电平模块进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A reference-less multilevel memristor based RRAM module
This paper presents a robust reference-less multilevel memristor based Resistive RAM (RRAM) module. In contrast to similar multilevel RRAMs, the proposed multilevel module eliminates the need for any comparing reference level. Because of the use of a differential 1T2M memory cell, data decoding is performed with traditional standard cells. On the other hand, no feedback loops are needed to ensure read, write and data decoding correctness. In addition, the proposed module is pinout compatible with the traditional 6T SRAM module. Simulation results, along with a comparison with other memristor based multilevel modules are presented.
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