{"title":"一种采用体电压分布法的CMOS宽带宽大功率db线性可变衰减器","authors":"Yan-Yu Huang, W. Woo, Chang-Ho Lee, J. Laskar","doi":"10.1109/RFIC.2010.5477366","DOIUrl":null,"url":null,"abstract":"A wide bandwidth, highly linear variable attenuator designed in 0.18µm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain compression of 7.5 dBm. The mid-band insertion loss is 1.6 dB and the maximum attenuation is 34.8 dB. This attenuator has a linear-in-dB controllability from 400 MHz to 3.7 GHz with input return loss better than 9 dB. To our knowledge, this is the highest linear CMOS variable attenuator with a wide bandwidth of 3.3 GHz.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method\",\"authors\":\"Yan-Yu Huang, W. Woo, Chang-Ho Lee, J. Laskar\",\"doi\":\"10.1109/RFIC.2010.5477366\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wide bandwidth, highly linear variable attenuator designed in 0.18µm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain compression of 7.5 dBm. The mid-band insertion loss is 1.6 dB and the maximum attenuation is 34.8 dB. This attenuator has a linear-in-dB controllability from 400 MHz to 3.7 GHz with input return loss better than 9 dB. To our knowledge, this is the highest linear CMOS variable attenuator with a wide bandwidth of 3.3 GHz.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477366\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method
A wide bandwidth, highly linear variable attenuator designed in 0.18µm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain compression of 7.5 dBm. The mid-band insertion loss is 1.6 dB and the maximum attenuation is 34.8 dB. This attenuator has a linear-in-dB controllability from 400 MHz to 3.7 GHz with input return loss better than 9 dB. To our knowledge, this is the highest linear CMOS variable attenuator with a wide bandwidth of 3.3 GHz.
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