沟槽填充超结器件的短路坚固性

2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI:10.1109/LAEDC54796.2022.9908223

Shubhankar Sharma, Yi Zheng, H. Wong

{"title":"沟槽填充超结器件的短路坚固性","authors":"Shubhankar Sharma, Yi Zheng, H. Wong","doi":"10.1109/LAEDC54796.2022.9908223","DOIUrl":null,"url":null,"abstract":"In this study, TCAD simulations are used to construct trench seuperjunction devices with similars BV (~750V) and Ron,sp < 10mΩ.cm2. TCAD mixed-mode simulation with self-heating is then used to study their short-circuit ruggedness. It is found that “p-sidewall” and “charge sheet” have shorter short circuit withstanding time, τsc. High thermal conductivity materials are then proposed to alleviate the problem and verified in TCAD simulations.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Short Circuit Ruggedness of Trench Filled Superjunction Devices\",\"authors\":\"Shubhankar Sharma, Yi Zheng, H. Wong\",\"doi\":\"10.1109/LAEDC54796.2022.9908223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, TCAD simulations are used to construct trench seuperjunction devices with similars BV (~750V) and Ron,sp < 10mΩ.cm2. TCAD mixed-mode simulation with self-heating is then used to study their short-circuit ruggedness. It is found that “p-sidewall” and “charge sheet” have shorter short circuit withstanding time, τsc. High thermal conductivity materials are then proposed to alleviate the problem and verified in TCAD simulations.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本研究中，使用TCAD模拟构建了具有类似BV (~750V)和Ron,sp < 10mΩ.cm2的沟槽超结器件。然后采用自加热的TCAD混合模式仿真研究了它们的短路坚固性。发现“p-侧壁”和“电荷片”具有较短的耐短路时间τsc。然后提出了高导热材料来缓解这一问题，并在TCAD仿真中进行了验证。

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Short Circuit Ruggedness of Trench Filled Superjunction Devices

In this study, TCAD simulations are used to construct trench seuperjunction devices with similars BV (~750V) and Ron,sp < 10mΩ.cm2. TCAD mixed-mode simulation with self-heating is then used to study their short-circuit ruggedness. It is found that “p-sidewall” and “charge sheet” have shorter short circuit withstanding time, τsc. High thermal conductivity materials are then proposed to alleviate the problem and verified in TCAD simulations.

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来源期刊

2022 IEEE Latin American Electron Devices Conference (LAEDC)

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