64m位DRAM失效分析与保护带确定案例研究

Chin-Te Kao, Sam Wu, Jwu E. Chen
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引用次数: 2

摘要

有缺陷的芯片无法通过测试,将导致质量问题,损害商誉,降低收入。寻找缺陷的根本原因并推导出预防策略是很重要的。本文以64M-DRAM为例,阐述了在硅调试阶段进行故障分析的方法,从而确定生产测试的方法。试验推导的目的是在提高成品率的同时,以较低的试验成本提高产品质量。介绍了缺陷产生的根本原因、缺陷的电气建模、试验选择和保护带的确定。最后,给出了一种定量的方法来说明失效分析对大批量DRAM产品的价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A case study of failure analysis and guardband determination for a 64M-bit DRAM
Chips with defects, which escape the test, will cause a quality problem and will hurt goodwill and decline revenue. It is important to look for the defect root causes and to derive the prevention strategy. In this paper a case study of a 64M-DRAM is used to demonstrate the approaches of failure analysis in silicon debug stage and, consequently the determination of the tests for production. The consideration of test derivation is both to enhance the yield and to improve the product quality with low test cost. The root cause, electrical modeling of defects, test selection and guardband determination are introduced. Finally, a quantitative measure is given to show the value of failure analysis for a high volume DRAM product.
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