A 1微米CMOS 160Mbit/s 8×8异步时分开关

ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference Pub Date : 1989-09-01 DOI:10.1109/ESSCIRC.1989.5468077

G. Surace, D. R. Clewett, A. Pickering

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引用次数: 2

摘要

本文介绍了一种采用1微米沟槽隔离技术和三层金属结构设计的CMOS自路由8输入8输出160mbit /s开关芯片。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A One Micron CMOS 160Mbit/s 8×8 Asynchronous Time Division Switch

This paper describes a CMOS self routing 8 input 8 output 160 Mbit/s switch chip designed on a one micron trench isolation technology and three layers of metal.

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ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference

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