点注入沟槽IGBT概念的实验论证

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147625

Elizabeth Buitrago, M. Antoniou, Nick Schneider, E. Bianda, Luca De-Michielis, C. Corvasce, F. Udrea

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引用次数: 0

摘要

点注入沟槽IGBT是一个很有前途的概念，它基于有源栅极沟槽之间的平台变窄。本文制作了额定电压为1200v的点注入沟槽IGBT的多种设计方案，并进行了实验研究。结果表明，该方法成功地加工了亚微米台面宽度，为具有竞争性能的IGBT器件提供了广阔的设计空间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimental Demonstration of Point-Injection Trench IGBT Concept

The point injection trench IGBT is a promising concept based on the narrowing of the mesa between active gate trenches. In this paper, multiple design variations of the point injection trench IGBT with a voltage rating of 1200 V are fabricated and experimentally investigated. It is shown that sub micron mesa widths are successfully processed and a broad design space of IGBT devices with competitive performance is spanned.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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