新兴MuGFET技术中基本模拟电路的设计与评估

G. Knoblinger, F. Kuttner, A. Marshall, C. Russ, P. Haibach, P. Patruno, T. Schulz, W. Xiong, M. Gostkowski, K. Schruefer, C. Cleavelin
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引用次数: 28

摘要

多栅极MOSFET (MuGFET)是超过45nm技术CMOS节点最有前途的候选器件。对于这些技术中的未来SoC解决方案,实现模拟构建模块的能力至关重要。到目前为止,关于模拟应用的finfet方面的出版物很少,并且没有关于使用这些先进器件实现模拟电路的报告和测量结果。在这项工作中,首次展示了用FinFET器件设计和实现基本模拟电路(低压带隙,米勒运算放大器和电流基准),包括测量结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and evaluation of basic analog circuits in an emerging MuGFET technology
Multi-gate MOSFET (MuGFET) are the most promising candidates for beyond 45nm technology CMOS nodes. For future SoC solutions in these technologies the ability to realize also analog building blocks is of utmost importance. Up to now only a few publications are available concerning the perspective of FinFETs for analog applications and no reports and measurement results can be found about the realization of analog circuits with these advanced devices. In this work the design and realization of basic analog circuits (low voltage bandgap, Miller op amp and current reference) with FinFET devices were demonstrated for the first time, including measurement results.
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