{"title":"采用CMOS寄生双极晶体管的50db可变增益放大器","authors":"T. Pan, A. Abidi","doi":"10.1109/VLSIC.1988.1037399","DOIUrl":null,"url":null,"abstract":"A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 mu m CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8*0.9 mm/sup 2/. >","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"96","resultStr":"{\"title\":\"A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOS\",\"authors\":\"T. Pan, A. Abidi\",\"doi\":\"10.1109/VLSIC.1988.1037399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 mu m CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8*0.9 mm/sup 2/. >\",\"PeriodicalId\":115887,\"journal\":{\"name\":\"Symposium 1988 on VLSI Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"96\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1988 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1988.1037399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1988 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1988.1037399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 96
摘要
一个增益范围为50 dB的可变增益放大器(VGA)已经在一个标准的3 μ m CMOS工艺中实现,使用寄生的横向和垂直双极晶体管形成电路的核心。双极晶体管已经得到了广泛的研究。VGA在整个增益范围内的带宽大于3mhz,使用单个5v电源。活动面积约为0.8*0.9 mm/sup 2/。>
A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOS
A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 mu m CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8*0.9 mm/sup 2/. >