半导体集成电路封装中金(Au)和铜(Cu)键合线熔断电流的实验和估计比较

R. Flauta, Zhou Zhou, H. Fan, Haibin Chen
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引用次数: 0

摘要

本文对用于半导体封装的焊线直径从Au的18-50um到Cu的23-50um进行了熔接电流实验和模拟。比较Au线和Cu线的熔断电流测量值,偏差在14 ~ 28%之间,粗线偏差最大。这与Cu比Au的导电性和导热性高25%的载流能力预测相吻合。与实验结果相比,修正Preece方程的预测值提高了6-33%。在两端绝缘条件下的有限元分析模拟结果表明,与实验测量值相比,金线的数值提高了23-35%。在两端连接散热器的情况下,这一比例进一步提高到35-41%。对于铜线,在相同的绝缘和散热器配置下,模拟得到的最大电流值分别比实验值高16-33%和38-40%。在极端条件下,模拟了金属丝端连接到散热器条件下的温度。FEA模拟计算的最大电流可作为估计所需导线数量和尺寸的指导方针,可用于特定器件和封装应用要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of Experimental and Estimated Fusing Current of Gold (Au) and Copper (Cu) Bonding Wires in Semiconductor IC Packages
In this paper, fusing current experiments and simulation were made over a range of bonding wire diameters used in semiconductor packaging from 18-50um for Au and 23-50um for Cu. Comparing the measured fusing current for Au and Cu wires, the deviation ranged from 14-28% with largest deviation for thicker wires. This correlates well with the prediction of ~25% more current carrying capacity of Cu given its higher electrical conductivity and thermal conductivity than Au. Prediction estimates from the modified Preece equation showed 6-33% higher values when compared with the experimental results. Finite element analysis simulation under condition with both ends insulated showed 23-35% higher value than the experimental measurements for Au wire. This increased further to 35-41% under the condition with both ends connected to heat sink. For Cu wire, maximum current values from simulations were 16-33% and 38-40% higher than the experimental values under the same insulated and with heat sink configurations, respectively. The temperatures used under the condition with wire ends connected to heat sink were simulated under extreme conditions. The maximum current from the FEA simulation calculations can be used as a guideline to estimate the required number and sizes of wire that can be used for specific device and package application requirements.
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