穿透式NPN快速恢复二极管的电子萃取机理研究

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147650

Xin Peng, Yong Liu, Hao Feng, Linhua Huang, J. Sin

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引用次数: 0

摘要

对穿透式NPN二极管的电子萃取机理进行了充分的研究和实验证明。与n型肖特基势垒类似，PT -NPN二极管中的PT -NPN区具有单极结构，可实现电子单向传导。由于电子提取，PT -NPN二极管的空穴注入可以调谐到接近N-Schottky实现PT -NPN (N-Schottky PT -NPN)二极管的水平。实验结果表明，与N -肖特基PT-NPN二极管相比，PT-NPN二极管的柔软系数提高了20%。此外，PT -NPN二极管具有稳定的1268 V击穿电压和低泄漏电流。而当势垒高度改变0.3 eV时，N -肖特基PT - NPN二极管的漏电流增加了10倍。

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On the Electron Extraction Mechanism in Punch-through NPN Fast Recovery Diodes

Electron extraction mechanism of the Punch-through (PT) NPN diode is fully investigated and experimentally demonstrated. Similar to the N-type Schottky barrier, the PT -NPN region in the PT -NPN diode features a unipolar structure for electron unidirectional conduction. The hole injection of the PT -NPN diode can be tuned to a level close to that of the N-Schottky implemented PT -NPN (N-Schottky PT - NPN) diode due to the electron extraction. Experimental results show that softness factor of the PT - NPN diode is increased by 20% compared with that of the N -Schottky PT-NPN diode. In addition, the PT -NPN diode attains a stable breakdown voltage of 1268 V with a low leakage current. However, the leakage current of the N -Schottky PT - NPN diode is increased by 10 times when the barrier height is changed by 0.3 eV.

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来源期刊

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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