硅传感器中质子辐射损伤的能量依赖性

A. Junkes, E. Donegani, C. Neubuser
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引用次数: 2

摘要

在硅传感器上进行辐照实验,模拟对撞机实验中的辐射环境,以预测辐照对探测器电性能的影响。在选择适合硅跟踪探测器的材料时,对辐照传感器的测量是非常宝贵的。对于用于大型强子对撞机(HL-LHC)高亮度阶段的升级探测器来说尤其如此,目前使用的硅传感器将受到带电和中性强子辐射的严重信号损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy dependence of proton radiation damage in Si-sensors
Irradiation experiments on silicon sensors are used to mimic the radiation environment at collider experiments with the aim to forecast the change of the electrical properties of a detector with irradiation. Measurements on irradiated sensors are invaluable in choosing a material well suited for a silicon tracking detector. This is especially true for the upgraded detectors to be used in the high-luminosity phase of the LHC (HL-LHC), where silicon sensors as currently used would suffer severe loss in signal from irradiation with charged and neutral hadrons.
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