一种采用双栅极hemt的q波段高增益低噪声可变增益放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528996

T. Kashiwa, M. Komaru, T. Katoh, N. Yoshida, N. Tanino, T. Takagi, O. Ishihara

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引用次数: 12

摘要

研制了一种采用双栅AlGaAs/InGaAs伪晶hemt的q波段高增益低噪声可变增益放大器(VGA)。双栅HEMT可以采用与单栅HEMT相同的工艺制作，栅极长度为0.15 /spl mu/m。q波段VGA由一个使用单门HEMT的1级低噪声放大器MMIC和一个使用双门HEMT的2级VGA MMIC组成。VGA在41 GHz到52 GHz范围内的增益大于20 dB。在相同的频率范围内，获得了大于30db的增益控制范围。当偏置为低噪声系数时，43 GHz的最小噪声系数为1.8 dB，相关增益为22 dB。这一性能可与迄今为止报道的q波段LNAs的最佳数据相媲美，包括基于GaAs的hemt和基于InP的hemt。

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A Q-band high gain and low noise variable gain amplifier using dual gate HEMTs

A Q-band high gain and low noise Variable Gain Amplifier (VGA) using dual gate AlGaAs/InGaAs pseudomorphic HEMTs has been developed. The dual gate HEMT can be fabricated using the same process as the single gate HEMT with a gate length of 0.15 /spl mu/m. The Q-band VGA consists of a 1-stage low noise amplifier MMIC using a single gate HEMT and a 2-stage VGA MMIC using dual gate HEMTs. The VGA has a gain of more than 20 dB from 41 GHz to 52 GHz. A gain control range of more than 30 dB is obtained in the same frequency range. A minimum noise figure of 1.8 dB with an associated gain of 22 dB is achieved at 43 GHz when biased for a low noise figure. This performance is comparable with the best data ever reported for LNAs at Q-band including both GaAs based HEMTs and InP based HEMTs.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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